silicon germanium bga

BGA616 datasheet(2/9 Pages) INFINEON Silicon Germanium

The information herein is given to describe certain components and shall not be considered as a guarantee of

bga715l7 V2.1

Silicon Germanium GPS Low Noise Amplifier 1 Silicon Germanium GPS Low Noise Amplifier Figure 1 Blockdiagram 2 Description The BGA715L7 is a front-end low noise amplifier for Global Positioning System (GPS) applications. The LNA provides 20 dB gain 0.7 dB noise figure and high linearity performance in the application configuration described in

bga715l7 V2.1

Silicon Germanium GPS Low Noise Amplifier 1 Silicon Germanium GPS Low Noise Amplifier Figure 1 Blockdiagram 2 Description The BGA715L7 is a front-end low noise amplifier for Global Positioning System (GPS) applications. The LNA provides 20 dB gain 0.7 dB noise figure and high linearity performance in the application configuration described in

bga622media.digikey

Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Data Sheet 5 Rev. 2.2 Maximum Ratings Note All Voltages refer to GND-Node Thermal resistance Table 1 Maximum ratings Parameter Symbol Limit Value Unit Voltage at pin V CC CC 3.5 V Voltage at pin Out V out 4V Current into pin In I in 0.1 mA Current into pin Out

BGA619 datasheetHigh IP3 Low Noise Amplifier<<<>>>

SGA-4586 DC-4000 MHZ Silicon Germanium HBT Cascadable Gain Block. Sirenza Microdevices is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high F T and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions.

ADRF6650 Datasheet and Product Info Analog Devices

The ADRF6650 is fabricated using an advanced silicon-germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS) process. It is available in a 56-lead RoHS-compliant 8 mm 8 mm lead frame chip scale package (LFCSP) package with an exposed pad. Performance is specified over the −40°C to 105°C maximum paddle temperature.

Integrated circuitWikipedia

An integrated circuit or monolithic integrated circuit (also referred to as an IC a chip or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material that is normally silicon.The integration of large numbers of tiny MOS transistors into a small chip results in circuits that are orders of magnitude smaller faster and less expensive than those

ADRF6650 Datasheet and Product Info Analog Devices

The ADRF6650 is fabricated using an advanced silicon-germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS) process. It is available in a 56-lead RoHS-compliant 8 mm 8 mm lead frame chip scale package (LFCSP) package with an exposed pad. Performance is specified over the −40°C to 105°C maximum paddle temperature.

BGA Technology Products Suppliers Engineering360

Description The BGA524N6 is a Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS) in the range from 1550 MHz to 1615 MHz.The LNA provides 19.6 dB gain and down to 0.7 dB noise figure in the application. Summary of Features • High insertion power gain

bga622media.digikey

Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Data Sheet 5 Rev. 2.2 Maximum Ratings Note All Voltages refer to GND-Node Thermal resistance Table 1 Maximum ratings Parameter Symbol Limit Value Unit Voltage at pin V CC CC 3.5 V Voltage at pin Out V out 4V Current into pin In I in 0.1 mA Current into pin Out

BGA Technology Products Suppliers Engineering360

Description The BGA524N6 is a Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS) in the range from 1550 MHz to 1615 MHz.The LNA provides 19.6 dB gain and down

Silicon Germanium Broadband MMIC Amplifier

Silicon Germanium Broadband MMIC Amplifier BGA612 VPS05605 4 2 1 3 GND 2 4 IN 1 Out 3 Features • Cascadable 50 Ω-gain block • 3 dB-bandwidth DC to 2.8 GHz with 17.0 dB typical gain at 1.0 GHz • Compression point P-1dB = 7 dBm at 2.0 GHz • Noise figure F 50Ω = 2.35 dB at 2.0 GHz • Absolute stable G f•70zH TSilicon Germanium

Silicon Germanium Broadband MMIC Amplifier

Silicon Germanium Broadband MMIC Amplifier BGA614 VPS05605 4 2 1 3 GND 2 4 IN 1 Out 3 Features • Cascadable 50 Ω-gain block • 3 dB-bandwidth DC to 2.4 GHz with 18.5 dB typical gain at 1.0 GHz • Compression point P-1dB = 12 dBm at 2.0 GHz • Noise figure F 50Ω = 2.30 dB at 2.0 GHz • Absolute stable G f•70zH TSilicon Germanium

IC Assembly Packaging PROCESS AND TECHNOLOGY

as silicon germanium and gallium arsenide . 22 June 2007 Achmad Sholehuddin SEMICONDUCTOR MANUFACTURING Production of pure silicon Wafer fabrication Ball Grid Array Flip Chip On Board (FCOB) Source TechSearch International Inc. Flip Chip Ball Grid Array

BGA616 datasheet(4/8 Pages) INFINEON Silicon Germanium

TSilicon Germanium technology. Applications • Driver amplifier for GSM/PCS/CDMA/UMTS • Broadband amplifier for SAT-TV LNBs • Broadband amplifier for CATV. Description. The BGA616 is a broadband matched general purpose MMIC amplifier in a. Darlington configuration. It is optimized.

MACOM Silicon Germanium (SiGe)

MACOM has led the way in applying silicon germanium (SiGe) BiCMOS technology for commercial and military applications to ensure system power savings easier bias and control circuitry lower overall component cost increased frequency and oscillating capabilities and integration benefits.

bga622media.digikey

Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Data Sheet 5 Rev. 2.2 Maximum Ratings Note All Voltages refer to GND-Node Thermal resistance Table 1 Maximum ratings Parameter Symbol Limit Value Unit Voltage at pin V CC CC 3.5 V Voltage at pin Out V out 4V Current into pin In I in 0.1 mA Current into pin Out

NBSG86A 2.5V/3.3V SiGe Differential Smart Gate with Output

performance Silicon Germanium products. The device is housed in a low profile 4x4 mm 16-pin flip-chip LGA or a 3x3 mm 16 pin QFN package. Differential inputs incorporate internal 50 termination

BGA925L6E6327 Datasheet PDFAlldatasheet

A 35 dB Gain-Sloped LNB I.F. Amplifier for Direct Broadcast Satellite Television Applications using the BGA430 BGB540 Silicon MMICs BGA 461 Silicon Germanium GPS Low Noise Amplifier

BGA524N6 Datasheet PDFAlldatasheet

A 35 dB Gain-Sloped LNB I.F. Amplifier for Direct Broadcast Satellite Television Applications using the BGA430 BGB540 Silicon MMICs BGA 461 Silicon Germanium GPS Low Noise Amplifier

IC Assembly Packaging PROCESS AND TECHNOLOGY

as silicon germanium and gallium arsenide . 22 June 2007 Achmad Sholehuddin SEMICONDUCTOR MANUFACTURING Production of pure silicon Wafer fabrication Ball Grid Array Flip Chip On Board (FCOB) Source TechSearch International Inc. Flip Chip Ball Grid Array

Silicon Germanium GPS Low Noise Amplifier

Silicon Germanium technology. It operates over a 2.4 V to 3.2 V supply range. BGA615L7 Data Sheet 5 Pin Definition and Function Maximum Ratings 1) All Voltages refer to GND-Node Pin No. Symbol Function 1AILNA input 2BIASDC Bias 3GNDRF

BGA725L6static6.arrow

Silicon Germanium Low Noise Amplifier for Global Navigation Sa tellite Syst ems (GNSS) in ultra small package with 0.77mm² footprint BGA725L6 Preliminary Data Sheet 7 Revision 2.0 Features High insertion power gain 20.0 dB Out-of-band input 3rd order intercept point -2 dBm Input 1 dB compression point -15 dBm

Silicon Germanium Broadband MMIC Amplifier

Silicon Germanium Broadband MMIC Amplifier BGA614 VPS05605 4 2 1 3 GND 2 4 IN 1 Out 3 Features • Cascadable 50 Ω-gain block • 3 dB-bandwidth DC to 2.4 GHz with 18.5 dB typical gain at 1.0 GHz • Compression point P-1dB = 12 dBm at 2.0 GHz • Noise figure F 50Ω = 2.30 dB at 2.0 GHz • Absolute stable G f•70zH TSilicon Germanium

NBSG86A 2.5V/3.3V SiGe Differential Smart Gate with Output

performance Silicon Germanium products. The device is housed in a low profile 4x4 mm 16-pin flip-chip LGA or a 3x3 mm 16 pin QFN package. Differential inputs incorporate internal 50 termination resistors and accept NECL (Negative ECL) PECL (Positive ECL) LVCMOS/LVTTL CML or LVDS. The Output Level Select (OLS)

BGA616Infineon Technologies

The BGA616 is based on Infineon Technologies B7HF Silicon Germanium technology.

NBSG86A 2.5V/3.3V SiGe Differential Smart Gate with Output

performance Silicon Germanium products. The device is housed in a low profile 4x4 mm 16-pin flip-chip LGA or a 3x3 mm 16 pin QFN package. Differential inputs incorporate internal 50 termination resistors and accept NECL (Negative ECL) PECL (Positive ECL) LVCMOS/LVTTL CML or LVDS. The Output Level Select (OLS)

Silicon Germanium Broadband MMIC Amplifier

Silicon Germanium Broadband MMIC Amplifier BGA612 VPS05605 4 2 1 3 GND 2 4 IN 1 Out 3 Features • Cascadable 50 Ω-gain block • 3 dB-bandwidth DC to 2.8 GHz with 17.0 dB typical gain at 1.0 GHz • Compression point P-1dB = 7 dBm at 2.0 GHz • Noise figure F 50Ω = 2.35 dB at 2.0 GHz • Absolute stable G f•70zH TSilicon Germanium

Semiconductor device fabricationWikipedia

Semiconductor device fabrication is the process used to manufacture semiconductor devices typically the metal–oxide–semiconductor (MOS) devices used in the integrated circuit (IC) chips that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photolithographic and chemical processing steps (such as surface passivation thermal oxidation planar

BGA715N7Arrow Electronics

Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS) BGA715N7 Preliminary Data Sheet 7 Revision 1.0 Features Application Ideal for all Global Navigation Satellite Systems (GNSS) like GPS Galileo GLONASS CO MPASS and others Description

bga622media.digikey

Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Data Sheet 5 Rev. 2.2 Maximum Ratings Note All Voltages refer to GND-Node Thermal resistance Table 1 Maximum ratings Parameter Symbol Limit Value Unit Voltage at pin V CC CC 3.5 V Voltage at pin Out V out 4V Current into pin In I in 0.1 mA Current into pin Out

BGA Datasheet PDFAlldatasheet

Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth DC to 2.4 GHz) BGA 312 Silicon Bipolar MMIC-Amplifier

60 GHz 4TX4TR MIMOSilicon Radar

It is intended for systems that also provide angle information.The chip is expected to be available in an 8 x 8 mm² BGA package and as bare die. manufactured in affordable Silicon-Germanium-Technology (SiGe). Contact. Silicon Radar Im Technologiepark 1 15236 Frankfurt (Oder) Germany. Phone 49 (0) 335 228 80 30 Fax 49 (0) 335 557

BGA Datasheet PDFAlldatasheet

Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth DC to 2.4 GHz) BGA 312 Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)

BGA 622 H6820 Infineon Technologies Mouser

BGA 622 H6820 Infineon Technologies RF Amplifier RF SILICON MMIC datasheet inventory pricing.